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this is information on a product in full production. november 2014 docid022795 rev 2 1/13 STL3NM60N n-channel 600 v, 1.5 ? , 2.2 a mdmesh? ii power mosfet in a powerflat? 3.3 x 3.3 hv package datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance application ? switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. 1 2 3 4 8 7 6 5 5 6 7 8 powerflat? 3.3x3.3 hv 4 1 2 3 d g s 5 6 7 8 bottom view order code r ds(on) max. i d STL3NM60N 1.8 ? 2.2 a table 1. device summary order code marking package packaging STL3NM60N 3nm60n powerflat? 3.3 x 3.3 hv tape and reel www.st.com
contents STL3NM60N 2/13 docid022795 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid022795 rev 2 3/13 STL3NM60N electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according r thj-case . drain current (continuous) at t c = 25 c 2.2 a i d (1) drain current (continuous) at t c =100 c 1.7 a i d (2) 2. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec drain current (continuous) at t amb = 25 c 0.65 a i d (2) drain current (continuous) at t amb =100 c 0.5 a i dm (2)(3) 3. pulse width limited by tjmax drain current (pulsed) 2.6 a p tot (2) total dissipation at t amb = 25 c 2 w p tot (1) total dissipation at t c = 25 c 22 w i as avalanche current, repetitive or not-repetitive (3) 1a e as single pulse avalanche energy (4) 4. starting tj = 25 c,i d = i as , v dd = 50v 119 mj derating factor (2) 0.016 w/c dv/dt (5) 5. i sd 2.2 a, dv/dt 400 a/s,v ds peak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max. 5.6 c/w r thj-amb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-amb max. 62.5 c/w
electrical characteristics STL3NM60N 4/13 docid022795 rev 2 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v, 1 a v ds = 600 v, t c = 125 c 100 a i gss gate body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 1 a 1.5 1.8 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50v, f=1 mhz, v gs =0 -188 - pf c oss output capacitance - 13 - pf c rss reverse transfer capacitance -1.1 - pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capaci tance giving the same charging time as c oss when v ds increases from 0 to 80% v dss output equivalent capacitance v gs =0, v ds =0 to 480 v - 100 - pf r g gate input resistance f =1 mhz gate dc bias=0 test signal level = 20 mv open drain -6 - ? q g total gate charge v dd = 480 v, i d = 2.2 a v gs =10 v (see figure 15 ) -9.5 - nc q gs gate-source charge - 1.6 - nc q gd gate-drain charge - 5.3 - nc
docid022795 rev 2 5/13 STL3NM60N electrical characteristics 13 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 1.1 a, r g = 4.7 ? , v gs = 10 v (see figure 14 ) -8.6-ns t r rise time - 6.2 - ns t d(off) turn-off delay time - 20.8 - ns t f fall time - 20 - ns table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 2.2 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 8.8 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2.2 a, v gs =0 - 1.6 v t rr reverse recovery time i sd = 2.2 a, di/dt = 100 a/s, v dd = 60 v (see figure 16 ) -168 ns q rr reverse recovery charge - 672 nc i rrm reverse recovery current - 8 a t rr reverse recovery time i sd = 2.2 a, di/dt = 100 a/s, v dd = 60 v, tj= 150 c (see figure 16 ) -2.3 ns q rr reverse recovery charge - 913 nc i rrm reverse recovery current - 9 a
electrical characteristics STL3NM60N 6/13 docid022795 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 1 0.1 0.01 0.001 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tamb=25c sinlge pulse am11244v1 10 -3 10 -2 10 -1 10 0 10 1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-amb d =tp/ t tp t single pulse d =0.5 10 2 rthj-amb=62.5 c/w zth_powerflat 3.3x3.3 i d 3 2 1 0 0 10 v ds (v) 20 (a) 5 15 25 4 5 5v 6v v gs =10v 30 am11245v1 i d 3 2 1 0 0 4 v gs (v) 8 (a) 2 6 10 4 5 v ds =21v am11246v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =480v i d =2.2a 10 12 300 200 100 0 400 500 v ds v ds (v) am11247v1 r ds(on) 1.46 1.44 1.42 1.40 0 1 i d (a) ( ) 0.5 1.5 1.48 1.50 1.52 1.54 v gs =10v 1.56 1.58 2 am11248v1
docid022795 rev 2 7/13 STL3NM60N electrical characteristics 13 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. normalized v (br)dss vs temperature figure 13. source-drain diode forward characteristics c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am11249v1 e oss 1 0 0 100 v ds (v) (j) 400 200 300 500 600 1.5 0.5 am11250v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am11252v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.5 2.1 i d =2.2a am11253v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 i d =1ma am11251v1 v sd 0 1.0 i sd (a) (v) 0.5 1.5 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =25c t j =150c t j =-50c 1.4 am11254v1
test circuits STL3NM60N 8/13 docid022795 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid022795 rev 2 9/13 STL3NM60N package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL3NM60N 10/13 docid022795 rev 2 figure 20. powerflat? 3.3 x 3.3 hv drawing . 8374983_rev_a
docid022795 rev 2 11/13 STL3NM60N package mechanical data 13 figure 21. powerflat? 3.3 x 3.3 hv recommended footprint (dimensions are in mm) table 8. powerflat? 3.3 x 3.3 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0 0.02 0.05 b 0.25 0.30 0.40 d3.30 d2 2.50 2.65 2.75 e3.30 e2 1.15 1.30 1.40 e0.65 l 0.20 0.30 0.40 aaa 0.10 bbb 0.10 ccc 0.10 ddd 0.05 eee 0.08 8374983_footprint
revision history STL3NM60N 12/13 docid022795 rev 2 5 revision history table 9. document revision history date revision changes 12-mar-2012 1 first release. 19-nov-2014 2 document status changed from preliminary to production data. updated figure 1.: internal schematic diagram , figure 2.: safe operating area , figure 3.: thermal impedance and figure 12.: normalized v (br)dss vs temperature . updated table 5.: dynamic and table 7.: source drain diode . minor text changes.
docid022795 rev 2 13/13 STL3NM60N 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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